schottky rectifier 75 amp, 30v 75slq030 major ratings and characteristics description/features 6/29/01 case style ir case style smd-1 www.irf.com 1 characteristics 75slq030 units i f(av) 75 a v rrm 30 v i fsm @ tp = 8.3ms half-sine 600 a v f @ 75apk, t j =125c 0.51 v t j , t stg operating and storage -55 to 150 c cathode anode anode high efficiency series the 75slq030 schottky rectifier has been expresslydesigned to meet the rigorous requirements of hi-rel environments. it is packaged in the hermetic surface mount smd-1 ceramic package. the device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. full mil-prf-19500 quality conformance testing is available on source control drawings to tx, txv and s quality levels. ? hermetically sealed ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability? surface mount ? lightweight pd-94068a downloaded from: http:///
75slq030 2 www.irf.com part number 75slq030 v r max. dc reverse voltage (v) v rwm max. working peak reverse voltage (v) voltage ratings 30 parameters limits units conditions i f(av) max. average forward current 75 a 50% duty cycle @ t c = 82 c, square waveform see fig. 5 i fsm max. peak one cycle non - repetitive 600 a @ t p = 8.3 ms half-sine surge current absolute maximum ratings parameters limits units conditions t j max.junction temperature range -55 to 150 c t stg max. storage temperature range -55 to 150 c r thjc max. thermal resistance, junction 1.1 c/w dc operation see fig. 4 to case wt weight (typical) 2.6 g die size (typical) 200x200 mils case style smd-1 thermal-mechanical specifications pulse width < 300s, duty cycle < 2% pins 2 and 3 externally tied together parameters limits units conditions v fm max. forward voltage drop 0.65 v @ 75a t j = -55 c see fig. 1 0.82 v @ 150a 0.59 v @ 75a t j = 25 c 0.79 v @ 150a 0.51 v @ 75a t j = 125 c 0.77 v @ 150a i rm max. reverse leakage current 1.0 ma t j = 25 c see fig. 2 100 ma t j = 100 cv r = rated v r 300 ma t j = 125 c c t max. junction capacitance 3650 pf v r = 5v dc ( 1mhz, 25 c ) l s typical series inductance 5.9 nh measured from center of cathode pad to center of electrical specifications anode pad downloaded from: http:///
75slq030 www.irf.com 3 fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - max. forward voltage drop characteristics 0 10 20 30 reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 reverse current - i r ( ma ) 125 c 75 c 25 c 100 c 0 10 20 30 reverse voltage -v r (v) 1000 10000 junction capacitance - c t (pf) t j = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 1 10 100 1000 instantaneous forward current - i f (a) tj = -55 c tj = 125 c tj = 25c downloaded from: http:///
75slq030 4 www.irf.com fig. 5 - max. allowable case temperature vs. average forward current fig. 4 - max. thermal impedance z thjc characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 20 40 60 80 100 120 average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 180 allowable case temprature - ( c) 75slq030 r thjc = 1.1 c/w dc ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 6/01 downloaded from: http:///
|
